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 CM200DU-34KA
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMODTM KA-Series Module
200 Amperes/1700 Volts
A TC Measured Point D T - (4 TYP.) H
G2
F
BE R CM
C2E1 25
C L E2 25 C1
E2
J
E1 G1
XH
S - NUTS (3 TYP)
Q
Q
P
N
G V - THICK x W - WIDE TAB (4 PLACES)
K
K
K M
C
LABEL
F
G2 E2 C2E1 E2 C1 E1 G1
Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 4.33 3.15 Millimeters 110.0 80.0 Dimensions M N P Q R S T V W X Inches 0.33 0.10 0.85 0.98 0.86 M6 0.26 Dia. 0.02 0.110 1.08 Millimeters 8.5 2.5 21.6 25.0 21.75 M6 6.5 Dia. 0.5 2.79 27.35
1.14 +0.04/-0.02 29.0 +1.0/-0.5 3.660.01 2.440.01 0.83 0.16 0.24 0.59 0.55 93.00.25 62.00.25 21.0 4.0 6.0 15.0 14.0
Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200DU-34KA is a 1700V (VCES), 200 Ampere Dual IGBTMODTM Power Module.
Type CM Current Rating Amperes 200 VCES Volts (x 50) 34
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-34KA Dual IGBTMODTM KA-Series Module 200 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25 C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C, Tj 150C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - CM200DU-34KA -40 to 150 -40 to 125 1700 20 200 400* 200 400* 1100 40 40 580 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
Viso 3500 * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 20mA, VCE = 10V IC = 200A, VGE = 15V, Tj = 25C IC = 200A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage** VCC = 1000V, IC = 200A, VGE = 15V IE = 200A, VGE = 0V, Tj = 25C Min. - - 4.0 - - - - - Typ. - - 5.5 3.2 3.8 900 - 2.2 Max. 1 0.5 7.0 4.0 - - 4.6 - Units mA A Volts Volts Volts nC Volts Volts
IE = 200A, VGE = 0V, Tj = 125C **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 1000V, IC = 200A, VGE1 = VGE2 = 15V, RG = 1.6 , Inductive Load Switching Operation IE = 200A VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 9.6 Max. 29.0 4.8 1.5 600 200 700 800 600 - Units nf nf nf ns ns ns ns ns C
Diode Reverse Recovery Time** Diode Reverse Recovery Charge**
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-34KA Dual IGBTMODTM KA-Series Module 200 Amperes/1700 Volts
Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Test Conditions Per IGBT 1/2 Module Per FWDi 1/2 Module Per Module, Thermal Grease Applied Tc Measured Point (Under Chips - IGBT Part)
* If you use this value, Rth(f-a) should be measured just under the chips.
Min. - - - -
Typ. - - 0.020 -
Max. 0.11 0.18 - 0.05*
Units C/W C/W C/W C/W
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
400
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
Tj = 25oC 15 VGE = 20V
14 12
400
11 VCE = 10V Tj = 25C Tj = 125C
6 5 4 3 2 1 0 0 5 10 15 20 0 100 200 300 400
GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)
VGE = 15V Tj = 25C Tj = 125C
300
10
300
200
9
200
100
8
100
0 0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
Tj = 25C
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
103
Tj = 25C
EMITTER CURRENT, IE, (AMPERES)
CAPACITANCE, Cies, Coes, Cres, (nF)
102
8
Cies
102
101
6
IC = 400A IC = 200A
4
Coes
101
100
Cres VGE = 0V f = 1MHz
2
IC = 80A
0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
100 1 2 3 4 5
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
10-1 10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-34KA Dual IGBTMODTM KA-Series Module 200 Amperes/1700 Volts
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
104
REVERSE RECOVERY TIME, trr, (ns)
103
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 200A
SWITCHING TIME, (ns)
103
tf td(off) td(on)
16 12 8 4
VCC = 800V
102
trr Irr
101
VCC = 1000V
102
tr
VCC = 1000V VGE = 15V RG = 1.6 Tj = 125C Inductive Load
VCC = 1000V VGE = 15V RG = 1.6 Tj = 25C Inductive Load
101 101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
101 101
102
EMITTER CURRENT, IE, (AMPERES)
100 103
0 0 400 800 1200
GATE CHARGE, QG, (nC)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE)
10-3 101
10-2
10-1
100
101
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)
10-3 101
10-2
10-1
100
101
100
Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.11C/W
100
Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.18C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
4


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